Much ado about nothings: the behaviour of oxygen vacancies in SrTiO3
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There is renewed interest in the behaviour of point defects in bulk SrTiO3 and at its extended defects due to the material's possible application in all-oxide electronics and as a memristive device. The combination of 18O/16O exchange and Secondary Ion Mass Spectrometry (SIMS) analysis constitutes a powerful tool for probing the behaviour of oxygen vacancies in oxides. In this contribution, after a brief introduction to the technique and its capabilities and limitations, I demonstrate the application of this method to investigating the behaviour of oxygen vacancies in SrTiO3 and at its extended defects (dislocations, surfaces, hetero-interfaces). Three systems will be examined: (1) single crystal SrTiO3 substrates; (2) low-angle grain boundaries in SrTiO3 comprising periodic arrays of edge dislocations; and (3) thin films samples. In general, I will emphasize the need to combine experimental and computational approaches, and I will draw attention to current challenges and outstanding problems.
Theatre C, Purdie, University of St. Andrews, St. Andrews, Fife, Scotland, UK
September 30, 2015
From: 15h30 To: 16h30
University of St Andrews
The oldest university in Scotland, with international renown for both research and education of undergraduates and postgraduates.