Much ado about nothings: the behaviour of oxygen vacancies in SrTiO3

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Abstract

Dr Roger De Souza
RWTH Aachen

There is renewed interest in the behaviour of point defects in bulk SrTiO3 and at its extended defects due to the material's possible application in all-oxide electronics and as a memristive device. The combination of 18O/16O exchange and Secondary Ion Mass Spectrometry (SIMS) analysis constitutes a powerful tool for probing the behaviour of oxygen vacancies in oxides. In this contribution, after a brief introduction to the technique and its capabilities and limitations, I demonstrate the application of this method to investigating the behaviour of oxygen vacancies in SrTiO3 and at its extended defects (dislocations, surfaces, hetero-interfaces). Three systems will be examined: (1) single crystal SrTiO3 substrates; (2) low-angle grain boundaries in SrTiO3 comprising periodic arrays of edge dislocations; and (3) thin films samples. In general, I will emphasize the need to combine experimental and computational approaches, and I will draw attention to current challenges and outstanding problems.

  • Venue

    Theatre C, Purdie, University of St. Andrews, St. Andrews, Fife, Scotland, UK

  • Date

    September 30, 2015

  • Time

    From: 15h30 To: 16h30

  • Sponsor

    University of St Andrews
    The oldest university in Scotland, with international renown for both research and education of undergraduates and postgraduates.

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